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  ? 1 ? e00x23-ps sony reserves the right to change products and specifications without prior notice. this information does not convey any licens e by any implication or otherwise under any patents or other right. application circuits shown, if any, are typical examples illustr ating the operation of the devices. sony cannot assume responsibility for any problems arising out of the use of these circuits. CXG1104TN 10 pin tssop (plastic) high power spdt switch with logic control description the CXG1104TN is a high power antenna switch mmic for use in cellular handsets, for example, cdma. the CXG1104TN has on-chip logic, which enables the switch circuit to operate by 1 cmos control line. the sony jfet process is used for low insertion loss and on-chip logic circuit. features ? low insertion loss: 0.3db @900mhz, 0.4db @1.9ghz  high linearity: iip3 (typ.) = 70dbm  1 cmos compatible control line  small package size: 10-pin tssop applications cellular handsets, for example, narrow band cdma and wide band cdma structure gaas j-fet mmic absolute maximum ratings (ta = 25c)  bias voltage v dd 7v  control voltage vctl 5 v  operating temperature topr ?35 to +85 c  storage temperature tstg ?65 to +150 c gaas mmics are esd sensitive devices. special handling precautions are required. the actual esd test data will be available later.
? 2 ? CXG1104TN block diagram and recommended circuit when using this ic, the following external components should be used: rctl: this resistor is used to improve esd performance. 1k ? is recommended. c rf : this capacitor is used for rf decoupling and must be used for all applications. 100pf is recommended. cbypass: this capacitor is used for dc line filtering. 100pf is recommended. truth table item vctl (h) vctl (l) v dd min. 2.0 0 2.6 ty p. 3.0 ? 3.0 max. 3.6 0.8 4.5 unit v v v 1 2 3 4 5 6 7 8 9 10 gnd gnd v dd cbypass (100pf) rf3 c rf (100pf) rf1 c rf (100pf) rf2 gnd gnd gnd rctl (1k ? ) c rf (100pf) cbypass (100pf) ctl dc bias condition (ta = 25 c) on pass rf1 ? rf2 rf1 ? rf3 ctl l h
? 3 ? CXG1104TN electrical characteristics (ta = 25 c) unit db db db db ? dbc dbc dbm dbm ? ? ? max. 0.55 0.65 1.4 5 80 200 ty p . 0.30 0.40 23 16.5 1.2 ? 75 ? 75 35 70 2 40 100 min. 20 14 ? 60 ? 60 32 60 symbol il iso. vswr 2fo 3fo p1db iip3 tsw ictl i dd item insertion loss isolation vswr harmonics 1db compression input power input ip3 switching speed control current bias current ? 1 pin = 29dbm, 900mhz, v dd = 3.0v, 0/3v control ? 2 pin = 25dbm (900mhz) + 25dbm (901mhz), v dd = 3.0v, 0/3v control condition 900mhz 1.9ghz 900mhz 1.9ghz 900mhz, 1.9ghz ? 1 ? 1 v dd = 3.0v, 0/3v control ? 2 vctl (high) = 3v v dd = 3v
? 4 ? CXG1104TN sony corporation package outline unit: mm sony code eiaj code jedec code package material lead treatment lead material package mass epoxy resin solder plating copper alloy package structure 0.22 ? 0.07 0.5 5 1.2max ? 2.8 0.1 10 6 ? 2.2 0.1 3.2 0.2 0.1 ? 0.05 + 0.15 0.45 0.15 0? to 10? 1 a (0.2) 0.22 ?0.07 + 0.08 (0.1) 0.12 ?0.015 + 0.025 detail a 0.02g tssop-10p-l01 10pin tssop (plastic) 0.1 0.1 m note: dimension " ? " does not include mold protrusion. 0.25 + 0.08


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